Andrea Fantini, L. Perniola, Marilyn Armand, J. Nodin, V. Sousa, A. Persico, J. Cluzel, C. Jahan, S. Maitrejean, Sandrine Lhostis, A. Roule, C. Dressler, G. Reimbold, B. D. Salvo, Pascale Mazoyer, Daniel Bensahel, F. Boulanger
{"title":"Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices","authors":"Andrea Fantini, L. Perniola, Marilyn Armand, J. Nodin, V. Sousa, A. Persico, J. Cluzel, C. Jahan, S. Maitrejean, Sandrine Lhostis, A. Roule, C. Dressler, G. Reimbold, B. D. Salvo, Pascale Mazoyer, Daniel Bensahel, F. Boulanger","doi":"10.1109/IMW.2009.5090585","DOIUrl":null,"url":null,"abstract":"This work presents a thorough comparative assessment of undoped GST and GeTe active phase-change (PC) materials for application to embedded memory devices (in particular consumer and automotive products). The material screening and qualification is performed through optical reflectivity and 4-probes resistivity measurements. Electrical performances are then investigated through tests of lance-cell analytical PC memory cells. Reset current densities of GST and GeTe are comparable, while GeTe data-retention at high- temperature is significantly improved compared to GST, suggesting that GeTe-based compounds are promising candidates for embedded PC memory applications.","PeriodicalId":113507,"journal":{"name":"2009 IEEE International Memory Workshop","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2009.5090585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 39
Abstract
This work presents a thorough comparative assessment of undoped GST and GeTe active phase-change (PC) materials for application to embedded memory devices (in particular consumer and automotive products). The material screening and qualification is performed through optical reflectivity and 4-probes resistivity measurements. Electrical performances are then investigated through tests of lance-cell analytical PC memory cells. Reset current densities of GST and GeTe are comparable, while GeTe data-retention at high- temperature is significantly improved compared to GST, suggesting that GeTe-based compounds are promising candidates for embedded PC memory applications.
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