Adaptation of "Drain Current Charge Pumping Technique" for Interface Trap Characterization in Short Channel MOS Transistors

Abstract

A recent characterization technique, ′′Drain Current Charge Pumping method (DCCP)′′, is modified for modelling the interface traps density, by taking into account the mobility degradation and parasitic series resistance. Such modification makes the technique applicable for both long and short channel devices. The extracted interface trap density is compared with results obtained using the classical charge pumping and the capacitance methods.