Multiple breakdown phenomena and modeling for non-uniform dielectric systems

E. Wu, Baozhen Li, J. Stathis, R. Achanta
{"title":"Multiple breakdown phenomena and modeling for non-uniform dielectric systems","authors":"E. Wu, Baozhen Li, J. Stathis, R. Achanta","doi":"10.1109/IEDM.2014.7047171","DOIUrl":null,"url":null,"abstract":"We report a wide range of experimental observations of multiple breakdown (BD) phenomena in BEOL/FEOL/MOL dielectric systems with large variability (non-uniformity). Newly developed successive breakdown theory of time-dependent clustering model can well capture these multiple BD events with and without correlation. The understanding of these effects can potentially lead to much improved and realistic projection for future technology nodes.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047171","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

We report a wide range of experimental observations of multiple breakdown (BD) phenomena in BEOL/FEOL/MOL dielectric systems with large variability (non-uniformity). Newly developed successive breakdown theory of time-dependent clustering model can well capture these multiple BD events with and without correlation. The understanding of these effects can potentially lead to much improved and realistic projection for future technology nodes.
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非均匀介质系统的多重击穿现象及建模
本文报道了具有大变异性(非均匀性)的BEOL/FEOL/MOL介电系统中多重击穿(BD)现象的广泛实验观察。新建立的时变聚类模型的连续击穿理论可以很好地捕捉这些具有或不具有相关性的多重BD事件。对这些影响的理解可能会导致对未来技术节点的改进和现实预测。
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