Low-voltage 9T FinFETSRAM cell for low-power applications

2015 28th IEEE International System-on-Chip Conference (SOCC) Pub Date : 2015-09-01 DOI:10.1109/SOCC.2015.7406929

F. Moradi, Mohammad Tohidi

引用次数: 2

Abstract

In this paper, a novel multi-threshold 9T-SRAM cell using FinFET technology with improved read and write margins in comparison with the standard 6T-SRAM cell is proposed. By the use of this bit-cell at supply voltage of 200mV (800mV), read and write margins are improved by 92% (97%) and 2X (40%), respectively. The proposed design operates at supply voltages lower than 300mV that results in a 3X lower power consumption compared to the standard 6T-SRAM cell.

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用于低功耗应用的低压9T finfesram单元

本文提出了一种采用FinFET技术的新型多阈值9T-SRAM单元，与标准6T-SRAM单元相比，该单元具有更高的读写裕度。在供电电压为200mV (800mV)时使用该位单元，读写余量分别提高92%(97%)和2X(40%)。所提出的设计工作在低于300mV的电源电压下，与标准6T-SRAM电池相比，功耗降低了3倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 28th IEEE International System-on-Chip Conference (SOCC)

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