{"title":"Failure analysis of Zn-Mo particle in the molding compound causing gate-source short in non-passivated MOSFET device","authors":"C. K. Lau, C. H. Tan","doi":"10.1109/IPFA.2014.6898140","DOIUrl":null,"url":null,"abstract":"This paper presents the failure analysis steps that localized and revealed the embedded Zn-Mo particle bridging two adjacent metal traces on a non-passivated MOSFET chip by using backside TIVA, frontside parallel polishing and EDX. TIVA emission spot localized between two metal traces indicates a high probability of particle defect.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents the failure analysis steps that localized and revealed the embedded Zn-Mo particle bridging two adjacent metal traces on a non-passivated MOSFET chip by using backside TIVA, frontside parallel polishing and EDX. TIVA emission spot localized between two metal traces indicates a high probability of particle defect.
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