Polarization-insensitive high-speed InP/InGaAsP access node space switch matrix for bidirectional optical ATM networks

R. Kyburz, W. Vogt, R. Krahenbuhl, M. Bachmann, T. Brenner, H. Melchior
{"title":"Polarization-insensitive high-speed InP/InGaAsP access node space switch matrix for bidirectional optical ATM networks","authors":"R. Kyburz, W. Vogt, R. Krahenbuhl, M. Bachmann, T. Brenner, H. Melchior","doi":"10.1109/ICIPRM.1996.492278","DOIUrl":null,"url":null,"abstract":"An InP/InGaAsP optical space switch matrix with 5 polarization-insensitive Mach-Zehnder interferometers in 3 stages and with 6 inputs and 6 outputs for access network applications is reported. The switches, specially designed for a low polarization dependence and low insertion losses, typically show on-state polarization-sensitivities of less than 0.5 dB, nearly identical switching voltages of around 7 V for TE and TM polarization, insertion losses below 11 dB, on-off ratios above 15 dB and high-speed switching capabilities up to 3 Gb/s.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

An InP/InGaAsP optical space switch matrix with 5 polarization-insensitive Mach-Zehnder interferometers in 3 stages and with 6 inputs and 6 outputs for access network applications is reported. The switches, specially designed for a low polarization dependence and low insertion losses, typically show on-state polarization-sensitivities of less than 0.5 dB, nearly identical switching voltages of around 7 V for TE and TM polarization, insertion losses below 11 dB, on-off ratios above 15 dB and high-speed switching capabilities up to 3 Gb/s.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
双向光ATM网络中偏振不敏感高速InP/InGaAsP接入节点空间交换矩阵
报道了一种具有5个偏振不敏感马赫-曾德尔干涉仪的3级6输入6输出InP/InGaAsP光空间开关矩阵,用于接入网应用。该开关专为低极化依赖和低插入损耗而设计,通常具有小于0.5 dB的导通状态极化灵敏度,几乎相同的开关电压约为7 V,用于TE和TM极化,插入损耗低于11 dB,通断比高于15 dB,高速开关能力高达3gb /s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
In-situ surface preparation of InP-based semiconductors prior to direct UVCVD silicon nitride deposition for passivation purposes An unified GSMBE growth model for GaInAsP on InP and GaAs Growth of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures lattice relaxed on GaAs and lattice matched on InP Active circulator MMIC in CPW technology using quarter micron InAlAs/InGaAs/InP HFETs Realisation of silicon based dielectrics anti-resonant reflecting optical waveguide (ARROW) on InP by photochemical deposition
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1