{"title":"Highly performant FDSOI pMOSFETs with metallic source/drain","authors":"T. Poiroux, M. Vinet, F. Nemouchi, V. Carron, Y. Morand, B. Previtali, S. Descombes, L. Tosti, O. Cueto, L. Baud, V. Balan, M. Rivoire, S. Deleonibus, O. Faynot","doi":"10.1109/VTSA.2009.5159304","DOIUrl":null,"url":null,"abstract":"We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345µA/µm and Ioff=30nA/µm at −1V for a 50nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow specifific contact resistivities as low as 0.1 Ω.µm<sup>2</sup>.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345µA/µm and Ioff=30nA/µm at −1V for a 50nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow specifific contact resistivities as low as 0.1 Ω.µm2.
V. Carron, F. Nemouchi, Y. Morand, T. Poiroux, M. Vinet, S. Bernasconi, O. Louveau, D. Lafond, V. Delaye, F. Allain, S. Minoret, L. Vandroux, T. Billon1