T. Poiroux, M. Vinet, F. Nemouchi, V. Carron, Y. Morand, B. Previtali, S. Descombes, L. Tosti, O. Cueto, L. Baud, V. Balan, M. Rivoire, S. Deleonibus, O. Faynot
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引用次数: 3
Abstract
We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345µA/µm and Ioff=30nA/µm at −1V for a 50nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow specifific contact resistivities as low as 0.1 Ω.µm2.
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