J. Shen, S. Tehrani, H. Goronkin, G. Kramer, R. Tsui
{"title":"An XNOR device in hybrid InAs/AlSb/GaSb and InGaAs material systems","authors":"J. Shen, S. Tehrani, H. Goronkin, G. Kramer, R. Tsui","doi":"10.1109/DRC.1995.496271","DOIUrl":null,"url":null,"abstract":"Proposes and demonstrates an XNOR device based on the resonant interband tunneling FET which combines an InAs/AlSb/GaSb resonant interband tunneling diode (RITD) with pseudomorphic InGaAs-channel field effect transistors (FET).","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"195 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496271","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Proposes and demonstrates an XNOR device based on the resonant interband tunneling FET which combines an InAs/AlSb/GaSb resonant interband tunneling diode (RITD) with pseudomorphic InGaAs-channel field effect transistors (FET).
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