R. Degraeve, A. Fantini, N. Raghavan, L. Goux, S. Clima, Y. Chen, A. Belmonte, S. Cosemans, B. Govoreanu, D. Wouters, P. Roussel, G. Kar, G. Groeseneken, M. Jurczak
{"title":"Hourglass concept for RRAM: A dynamic and statistical device model","authors":"R. Degraeve, A. Fantini, N. Raghavan, L. Goux, S. Clima, Y. Chen, A. Belmonte, S. Cosemans, B. Govoreanu, D. Wouters, P. Roussel, G. Kar, G. Groeseneken, M. Jurczak","doi":"10.1109/IPFA.2014.6898205","DOIUrl":null,"url":null,"abstract":"In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their resulting LRS and HRS-distributions.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 43
Abstract
In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their resulting LRS and HRS-distributions.
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