{"title":"Heterogeneous integration of GaN device layer by epitaxial film bonding","authors":"M. Ogihara, S. Yokoyama, Y. Amemiya","doi":"10.1109/ISDCS.2019.8719268","DOIUrl":null,"url":null,"abstract":"Heterogeneous integration of GaN light emitting diode (LED) thin layers with dissimilar material guest substrates by epitaxial film bonding (EFB) has been studied. Light emitting operation on the guest substrate has been proven.","PeriodicalId":293660,"journal":{"name":"2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2019.8719268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Heterogeneous integration of GaN light emitting diode (LED) thin layers with dissimilar material guest substrates by epitaxial film bonding (EFB) has been studied. Light emitting operation on the guest substrate has been proven.
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