Process optimization by advanced process control with fault detection system for flash memory

T. Luoh, Changrui Liao, Li-Chung Yang, Ling-Wu Yang, Chi-Tung Huang, H. Shih, Kuang-Chao Chen, H. Chung, J. Ku, Chih-Yuan Lu
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引用次数: 0

Abstract

Plasma damaged 0.18 /spl mu/m flash memory device has been resolved by integrating advanced process control with fault detection and classification (APC FDC) system in ILD HDP PSG process. PSG plasma damage to device was detected by real-time monitoring APC control system with multivariate statistically calculation to detect out-of-control conditions within five minutes. The unhealthy recipe contents and the hardware healthy status are detected by integrating APC FDC system. After we analyzing the fault detection and classification function, APC system successfully predicts the same results as wafer acceptance test and wafer sort yield. Recipe and hardware are modified to eliminate the plasma damage according the analysis results.
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采用先进的过程控制和故障检测系统对闪存进行工艺优化
通过将先进的过程控制与故障检测与分类(APC FDC)系统集成在ILD HDP PSG过程中,解决了0.18 /spl mu/m闪存器件的等离子损坏问题。通过实时监测APC控制系统检测PSG等离子体对设备的损伤,并进行多元统计计算,在5分钟内检测出失控情况。通过集成APC FDC系统,检测不健康配方含量和硬件健康状态。通过对故障检测和分类功能的分析,APC系统成功地预测了与晶圆验收测试和晶圆分选良率相同的结果。根据分析结果,对配方和硬件进行了改进,以消除等离子体损伤。
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