P. Cheng, Chihching Yang, Meng-Yin Hsu, C. Lin, Y. King
{"title":"Variable-length gateless transistor for analog one-time-programmable memory applications","authors":"P. Cheng, Chihching Yang, Meng-Yin Hsu, C. Lin, Y. King","doi":"10.1109/VLSI-TSA.2016.7480485","DOIUrl":null,"url":null,"abstract":"This work presents a novel embedded Analog Gateless One-Time-Programming Memory (AG-OTP), implemented by standard CMOS logic process. The NVM cell includes a gateless storage node in series with a select transistor; where the charge stored on the parasitic ONO structure. The p-channel device is programmed by channel hot hole induced hot electron injection (CHHIHE). An angled-shaped source region allows the gateless channel to be partially turned-on and gradually increase the read current level. This unique structure enable the storage of analog data as continuous read current can be readily achieved.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2016.7480485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This work presents a novel embedded Analog Gateless One-Time-Programming Memory (AG-OTP), implemented by standard CMOS logic process. The NVM cell includes a gateless storage node in series with a select transistor; where the charge stored on the parasitic ONO structure. The p-channel device is programmed by channel hot hole induced hot electron injection (CHHIHE). An angled-shaped source region allows the gateless channel to be partially turned-on and gradually increase the read current level. This unique structure enable the storage of analog data as continuous read current can be readily achieved.
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