{"title":"A selective low induced damage ICP dry etching process for a self-aligned InP-InGaAs HBT technology","authors":"J. Etrillard, S. Blayac, M. Riet","doi":"10.1109/ICIPRM.1999.773711","DOIUrl":null,"url":null,"abstract":"We report on an inductively coupled plasma (ICP) process using CH/sub 4//H/sub 2//O/sub 2/ chemistry which have been studied for a self-aligned HBT technology. A very low bias voltage is used to reduce the induced damages. The study has concerned the ion flux characteristics: ion current and ion energy. Surface morphology, pattern profile, etch rates and induced damages were investigated as functions of ion energy and density for an optimized ICP reactor configuration. A comparison is made with an ICP process using a SiCl/sub 4/ chemistry. Finally, a selective process allowing one to attempt an almost full dry etching self-aligned process for HBT applications is described.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773711","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report on an inductively coupled plasma (ICP) process using CH/sub 4//H/sub 2//O/sub 2/ chemistry which have been studied for a self-aligned HBT technology. A very low bias voltage is used to reduce the induced damages. The study has concerned the ion flux characteristics: ion current and ion energy. Surface morphology, pattern profile, etch rates and induced damages were investigated as functions of ion energy and density for an optimized ICP reactor configuration. A comparison is made with an ICP process using a SiCl/sub 4/ chemistry. Finally, a selective process allowing one to attempt an almost full dry etching self-aligned process for HBT applications is described.
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