{"title":"SOI charging prevention: chip-level net tracing and diode protection","authors":"T. Hook, H. Bonges, D. Harmon, W. Lai","doi":"10.1109/ICICDT.2004.1309926","DOIUrl":null,"url":null,"abstract":"In this paper we show that the SOI FET is conductive during processing, and also that a FET shunted across the gate and source/drain of another transistor does in fact protect that device against charging damage.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper we show that the SOI FET is conductive during processing, and also that a FET shunted across the gate and source/drain of another transistor does in fact protect that device against charging damage.
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