P. Singh, G. Bisht, R. Hofmann, K. Singh, S. Mahapatra
{"title":"Dual Layer Pt Metal Nanocrystal Flash for Multi-Level-Cell NAND Application","authors":"P. Singh, G. Bisht, R. Hofmann, K. Singh, S. Mahapatra","doi":"10.1109/IMW.2009.5090587","DOIUrl":null,"url":null,"abstract":"Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10\n 4\n cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post- cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.","PeriodicalId":113507,"journal":{"name":"2009 IEEE International Memory Workshop","volume":"4615 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2009.5090587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10
4
cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post- cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.
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