Stability Analysis of 6T CNTFET SRAM Cell for Single and Multiple CNTs

Abstract

Carbon Nano Tube Field Effect Transistor (CNTFET) is a best futuristic device for nano scale range VLSI design than MOSFETs. This is due to the favourable physical properties of CNTFET. In this paper we present the comparative Stability analysis of a CNTFET based six transistor Static Random Access Memory (6T SRAM) cell for single nano tube CNTFET and multiple nano tubes CNTFET. The SRAM cell stability is measured by Static Noise Margin (SNM) of the cell. The SNM of 6T SRAM is also analysed for different chiral vectors. The comparison shows that the single tube and low chiral vector values provides high stability of CNTFET 6T SRAM cell than multiple tubes with high chiral vector. The simulation is carried out with 32nm technology.