{"title":"'Self-body-biased' SOI MOSFET through 'depletion isolation effect'","authors":"M. Terauchi, K. Terada","doi":"10.1109/SOI.1999.819846","DOIUrl":null,"url":null,"abstract":"A new SOI MOSFET structure utilizing a novel body potential control scheme is proposed. In its 'on' state, its body potential is electrically isolated from the external body terminal by the gate depletion layer, and is controlled automatically through the drain current and drain voltage. More than 30% improvement in current drivability is predicted.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new SOI MOSFET structure utilizing a novel body potential control scheme is proposed. In its 'on' state, its body potential is electrically isolated from the external body terminal by the gate depletion layer, and is controlled automatically through the drain current and drain voltage. More than 30% improvement in current drivability is predicted.
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