T. Nuns, C. Inguimbert, S. Soonckindt, B. Dryer, T. Buggey, C. Poivey
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引用次数: 0
Abstract
This paper proposes some new experimental data comparing the damage factor of silicon devices with the NIEL after electron, proton and gamma irradiations. The results show that the measured damage factors fit better with the “effective” NIEL, an alternative model of displacement damage effects, than with the classical one.
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