{"title":"Composition dependence of carrier lifetime and spontaneous emission of highly strained GaInNAs/GaAs QW lasers","authors":"F. Koyama, S. Sato, T. Miyamoto, K. Iga","doi":"10.1109/ICIPRM.1999.773758","DOIUrl":null,"url":null,"abstract":"The GaInNAs/GaAs system has been attracting much interest for 1.3 /spl mu/m monolithic vertical cavity surface emitting lasers (VCSELs). So far, room temperature operations of 1.3 /spl mu/m GaInNAs/GaAs edge emitting lasers grown by either gas source MBE or MOCVD have been demonstrated. However, the degradation of crystal qualities with increasing the nitrogen composition is a remaining problem. The origin for the deterioration is still unclear. It is essential to find the origin and to improve the quality of GaInNAs for realizing high performance long wavelength GaInNAs lasers. In this work, we present the composition dependence of emission characteristics of highly strained GaInNAs quantum well lasers, including the carrier lifetime, the spontaneous emission efficiency and the threshold current density. A prospect of long wavelength GaInNAs VCSELs for high speed LANs is also discussed.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"159 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773758","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The GaInNAs/GaAs system has been attracting much interest for 1.3 /spl mu/m monolithic vertical cavity surface emitting lasers (VCSELs). So far, room temperature operations of 1.3 /spl mu/m GaInNAs/GaAs edge emitting lasers grown by either gas source MBE or MOCVD have been demonstrated. However, the degradation of crystal qualities with increasing the nitrogen composition is a remaining problem. The origin for the deterioration is still unclear. It is essential to find the origin and to improve the quality of GaInNAs for realizing high performance long wavelength GaInNAs lasers. In this work, we present the composition dependence of emission characteristics of highly strained GaInNAs quantum well lasers, including the carrier lifetime, the spontaneous emission efficiency and the threshold current density. A prospect of long wavelength GaInNAs VCSELs for high speed LANs is also discussed.
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