M. Nawaz, S. Persson, H. Zirath, E. Choumas, A. Mellberg
{"title":"A novel gate process for InP based HEMTs with gate length from 0.06 to 0.2 /spl mu/m","authors":"M. Nawaz, S. Persson, H. Zirath, E. Choumas, A. Mellberg","doi":"10.1109/ICIPRM.1999.773769","DOIUrl":null,"url":null,"abstract":"A novel, fast and reliable process for making T-shaped gates has been developed. It uses two PMMA layers and one PMGI resist layer which have completely selective developers that result in a large process window. Using this process scheme, gate lengths from 60 to 200 nm have easily been made in the same process step. The processed InP-HEMTs show excellent dc and rf-performance. The process has a good control of the gate lengths and give a high yield, and is therefore suitable for mass production of HEMTs and MMICs.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A novel, fast and reliable process for making T-shaped gates has been developed. It uses two PMMA layers and one PMGI resist layer which have completely selective developers that result in a large process window. Using this process scheme, gate lengths from 60 to 200 nm have easily been made in the same process step. The processed InP-HEMTs show excellent dc and rf-performance. The process has a good control of the gate lengths and give a high yield, and is therefore suitable for mass production of HEMTs and MMICs.
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