An advanced Bragg diffraction imaging technique to characterize defects in SiC and GaN : Topic/category, e.g. AM: Advanced Metrology

Abstract

An advanced X-ray Bragg diffraction imaging technique known as Rocking Curve Imaging (RCI) was implemented and developed at the European Synchrotron Radiation Facility (ESRF) for the characterization of defects in bulk crystals and crystalline layers. We describe the technical aspects of RCI and show, as examples, results of its application to the observation of the long-range distortion field between parallel dislocations with opposite Burgers vectors that are often present in SiC, and the growth defects in ammonothermally grown GaN crystals. RCI allows obtaining unique results because of its sub-μm spatial resolution and its μradian range angular resolution.