Anomaly of NBTI data for PMOS transistors degraded by plasma processing induced charging damage (PID)

Abstract

Anomalous NBTI degradation characteristics have been observed for pMOS transistors which had experienced plasma processing induced charging damage. This is a critical topic for correct NBTI lifetime predictions from antenna transistor structures with PID for p-type MOS and FinFET transistors with various thicknesses of SiO2 or high-K gate dielectrics. Examples from the literature also depict this NBTI anomaly. A qualitative charge trapping model is described for root cause analysis. A proposed methodology demonstrates the correction of NBTI data from antenna transistor structures with PID.