A. Napolean, N. M. Sivamangai, Joel Samuel, Vimukth John
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引用次数: 5
Abstract
This review contribute the consequence of compliance current (CC) on a widely used metal oxide Resistive Random Access Memory (RRAM) device distinctive characteristics of resistive switching and reliability. Article starts with the current trends of RRAM technology, then short knowledge about different nonvolatile memory technology forces to limit, RRAM device structure, switching principles, material selection and reliability controversy. Next a detailed short account of CC value with other RRAM device measure. This review ends with the decisive of electing an optimized CC value for a superior switching and reliability.
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