Case Study on Precise Boron Quantification of Mixed Matrix

Abstract

Material characterization tool, Secondary Ion Mass Spectrometry (SIMS) with its high precision and reproducibility is widely used to capture any abnormality in the dopant profile of the implanted species caused by drift in implant processes or equipment. The characterization usually is performed on setup test wafer with a single matrix substrate (usually silicon substrate). However, this quantification approach is not suitable for a mixed matrix of the silicon substrate and silicon dioxide (physical segregation structure). In this paper, it is shown that accurate dosage quantification can be obtained using the proposed numerical method.