Defect Density Reduction of Thin SiO2 MOSFET through Oxidation Pre-cleaning improvement – a Fast Wafer Level Reliability Monitoring

M. H. Kamaruddin, N. Soin, C. Veriven, C.M. How, C. K. Ang
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引用次数: 1

Abstract

We conducted experiment to reduce the level defect density in 7.5nm thin SiO2 CMOS by improving the pre-cleaning of silicon surface before gate oxidation. Fast wafer level reliability monitoring is implemented using ramped voltage stress (RVS) where from the breakdown Weibull chart, the inclination point of intrinsic and extrinsic will give the measurement of defect density (unit is number of defect per cm2). We measured high defect density of >20 times the defect density target. Through systematic problem solving methodology, root cause was found to be due to ineffective cleaning method. With the additional SPM cleaning in the gate oxidation pre-clean step, defect density reduced by almost 95%. SPM chemistry reduces the surface roughness and also improves contaminations removal on the wafer surface prior to gate oxidation. Rougher interface of Si-SiO2 leads to early failure and lower TDDB. Inline silicon surface roughness check is not practical due to very small nature of embedded-type contaminants a rough silicon surface creates. In order to increase detection probability of micro-sized particles, a good reliability monitoring strategy using special test structures is implemented.
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通过氧化预清洗改进降低薄SiO2 MOSFET缺陷密度-快速晶圆级可靠性监测
我们通过改进栅极氧化前硅表面的预清洗来降低7.5nm薄SiO2 CMOS的能级缺陷密度。快速晶圆级可靠性监测是使用斜坡电压应力(RVS)实现的,从击穿威布尔图中,内在和外在的倾斜点将给出缺陷密度的测量(单位是每平方厘米的缺陷数量)。我们测量的高缺陷密度大于缺陷密度目标的20倍。通过系统的问题解决方法,找出了清洗方法无效的根本原因。在浇口氧化预清洗步骤中进行额外的SPM清洗,缺陷密度降低了近95%。SPM化学降低了表面粗糙度,也改善了晶圆片表面在栅氧化之前的污染物去除。Si-SiO2界面越粗糙,破坏越早,TDDB越低。由于粗糙的硅表面产生的嵌入型污染物非常小,因此在线硅表面粗糙度检查是不实用的。为了提高微细颗粒的检测概率,采用特殊的试验结构实现了良好的可靠性监测策略。
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