A CuxO-based resistive memory with low power and high reliability for SOC nonvolatile memory applications

M. Wang, Y. L. Song, H. Wan, H. Lv, P. Zhou, T. Tang, Y. Y. Lin, R. Huang, S. Song, J. Wu, H. Wu, M. Chi
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引用次数: 1

Abstract

A CuxO-based resistive memory is successfully integrated in 0.13µm logic process. Operation algorithm is optimized to achieve low power consumption with reset current down to 30 µA. High thermal stability and small cell size less than 22F2 have been demonstrated. The advantages make this device promising for system on chip non-volatile memory applications.
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一种基于cuxo的电阻式存储器,具有低功耗和高可靠性,适用于SOC非易失性存储器应用
在0.13µm的逻辑制程中成功集成了基于cuxo的电阻式存储器。操作算法经过优化,实现低功耗,复位电流低至30µA。高热稳定性和小电池尺寸小于22F2已被证明。这些优点使该器件有望应用于片上系统非易失性存储器。
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