A Highly Linear D-Band Broadband Down Conversion Mixer in 22-nm FDSOI CMOS

Kaan Balaban, Matthias Möck, A. Ulusoy
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引用次数: 1

Abstract

This paper presents the design and experimental characterization of a D-band down-conversion mixer in 22-nm FDSOI CMOS technology, which exhibits a conversion gain of 1 to 4 dB within a frequency range of115 to 165 GHz, when driven with an LO power of 3.5 dBm. Further, the passive architecture presents a good out-of-band rejection, with a 3-dB bandwidth of 500 MHz within the entire operating frequency range. The downconversion mixer exhibits an input 1-dB compression point of -5.2dBm measured with an LO power of -19dBm at the center frequency of 140 GHz.
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基于22nm FDSOI CMOS的高线性d波段宽带下变频混频器
本文介绍了一种采用22 nm FDSOI CMOS技术的d波段下变频混频器的设计和实验特性,当本端功率为3.5 dBm时,该混频器在115 ~ 165 GHz频率范围内的转换增益为1 ~ 4db。此外,无源架构具有良好的带外抑制性能,在整个工作频率范围内具有500mhz的3db带宽。下变频混频器的输入压缩点为-5.2dBm,在中心频率为140 GHz时,LO功率为-19dBm。
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