C. Berthelemot, P. Vigier, J. Dumas, A. Clei, R. Palla, J. Harmand
{"title":"Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization","authors":"C. Berthelemot, P. Vigier, J. Dumas, A. Clei, R. Palla, J. Harmand","doi":"10.1109/ICIPRM.1996.492383","DOIUrl":null,"url":null,"abstract":"The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 /spl mu/m optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 /spl mu/m optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer.
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