Yu. K. Al’tudov, D. S. Gaev, A. V. Pskhu, S. Sh. Rekhviashvili
{"title":"Optically Pumped Bipolar Transistor","authors":"Yu. K. Al’tudov, D. S. Gaev, A. V. Pskhu, S. Sh. Rekhviashvili","doi":"10.1134/s1063739723700762","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The properties of a bipolar NPN transistor when exposed to unmodulated incoherent radiation created by a white LED are studied. The static and dynamic characteristics of the transistor are measured at various exposure intensities. It is shown that the change in the characteristics of the transistor under the optical effect is due to the increased lifetime of nonequilibrium charge carriers and the photovoltaic effect in PN transitions. For these reasons, the gain increases, the switching threshold decreases, and the transistor’s speed increases. The results obtained are applicable both to the creation of high-speed transistors and integrated circuits of a fundamentally new type.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"18 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723700762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The properties of a bipolar NPN transistor when exposed to unmodulated incoherent radiation created by a white LED are studied. The static and dynamic characteristics of the transistor are measured at various exposure intensities. It is shown that the change in the characteristics of the transistor under the optical effect is due to the increased lifetime of nonequilibrium charge carriers and the photovoltaic effect in PN transitions. For these reasons, the gain increases, the switching threshold decreases, and the transistor’s speed increases. The results obtained are applicable both to the creation of high-speed transistors and integrated circuits of a fundamentally new type.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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