A Comprehensive Study of Nonuniformity Properties of the LiCoO2 Thin-Film Cathode Fabricated by RF Sputtering

Q4 Engineering Russian Microelectronics Pub Date : 2024-07-26 DOI:10.1134/s1063739724600250
S. V. Kurbatov, A. S. Rudy, V. V. Naumov, A. A. Mironenko, O. V. Savenko, M. A. Smirnova, L. A. Mazaletsky, D. E. Pukhov
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Abstract

The influence of nonuniformity properties of the LiCoO2 cathode film deposited by magnetron sputtering on the capacity of all-solid-state thin-film lithium-ion batteries (ASSLIB) was studied. It was found that the film nonuniformity corresponds to the magnetron plasma density distribution and the angular distribution of sputtered particles. The capacity distribution of the ASSLIB with LiCoO2 cathode depending on the distance to the substrate center was studied. The maximum capacity corresponded to the dense part of the toroidal region of the magnetron plasma. It was determined that the main causes of batteries capacity decline in the central part and on the edge of the substrate are the impurity phase of lithium cobaltate and the smaller thickness of the cathode layer, respectively.

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射频溅射法制造的钴酸锂薄膜阴极的非均匀性综合研究
摘要 研究了磁控溅射沉积钴酸锂正极薄膜的不均匀性对全固态薄膜锂离子电池(ASSLIB)容量的影响。研究发现,薄膜的不均匀性与磁控管等离子体密度分布和溅射粒子的角度分布相对应。研究了带有钴酸锂阴极的 ASSLIB 的容量分布,它取决于到衬底中心的距离。最大容量与磁控管等离子体环形区域的密集部分相对应。结果表明,电池容量在基板中心和边缘下降的主要原因分别是钴酸锂的杂质相和阴极层厚度较小。
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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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