D. B. Murin, A. Yu. Grazhdyan, I. A. Chesnokov, I. A. Gogulev
{"title":"Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma","authors":"D. B. Murin, A. Yu. Grazhdyan, I. A. Chesnokov, I. A. Gogulev","doi":"10.1134/s1063739724600183","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The influence of the addition of hydrogen on the electrophysical parameters and emission spectra of tetrafluoromethane under conditions of a direct current glow discharge is studied. It is established that the gas temperature changes nonlinearly with an increasing proportion of hydrogen in the plasma-forming mixture. The emission spectra of tetrafluoromethane plasma with hydrogen are obtained and analyzed. It is shown that plasma radiation is represented by atomic and molecular components, and the dependencies of the line radiation intensities on the external conditions of the discharge are determined by the excitation of emitting states during direct electron impacts.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"38 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739724600183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The influence of the addition of hydrogen on the electrophysical parameters and emission spectra of tetrafluoromethane under conditions of a direct current glow discharge is studied. It is established that the gas temperature changes nonlinearly with an increasing proportion of hydrogen in the plasma-forming mixture. The emission spectra of tetrafluoromethane plasma with hydrogen are obtained and analyzed. It is shown that plasma radiation is represented by atomic and molecular components, and the dependencies of the line radiation intensities on the external conditions of the discharge are determined by the excitation of emitting states during direct electron impacts.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
