D. A. Abrameshin, E. D. Pozhidaev, V. S. Saenko, S. R. Tumkovskiy
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引用次数: 0
Abstract
Spacecraft are affected by cosmic plasma electrons, which cause the electrification of their dielectric materials. As a result, electrostatic discharges occur, leading to failures in the operation of onboard radio electronics, reducing the period of the active existence of the spacecraft. The use of composite polymer dielectrics with increased conductivity is a promising method for protecting against the effects of electrostatic discharges. This paper presents the results of modeling the characteristics of a broadband amplifier made on a printed circuit board using a highly conductive composite dielectric. Resistances are added to the model of the ongoing electrical processes that characterize current leakage from the circuit nodes to the zero conductor due to the decrease in the specific volume resistance of the printed circuit board’s material. A computer simulation of a broadband amplifier and an experimental study of its performance in the operating frequency band of 0.5–70 MHz are carried out. It is shown that a change in the bandwidth and gain occurs only when the conductivity becomes higher than 6 × 10–4 Ohm–1 m–1. The results of an experimental study of a broadband amplifier show that the proposed model for accounting for the specific volume resistance of the printed circuit board material adequately describes its characteristics. The fact that even with a conductivity of 10–9 Ohm–1 m–1 electrostatic discharges are excluded indicates the possibility of protecting broadband amplifiers as part of the radio-electronic devices of spacecraft from electrification when using composite dielectrics of increased conductivity.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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