D. B. Murin, I. A. Chesnokov, I. A. Gogulev, A. E. Grishkov
{"title":"Probe and Spectral Diagnostics of the Plasma of the BCl3–Cl2 Gas Medium","authors":"D. B. Murin, I. A. Chesnokov, I. A. Gogulev, A. E. Grishkov","doi":"10.1134/s1063739723700701","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The probe and spectral measurements of the plasma of the BCl<sub>3</sub>–Cl<sub>2</sub> gas medium are carried out. Data are obtained on the influence of the initial composition of the gas medium on the electric field strength, gas temperature, particle concentration, and reduced electric field strength under conditions of a direct current glow discharge. The emission spectra of the plasma of the BCl<sub>3</sub>–Cl<sub>2</sub> gas medium are analyzed, the main emitting components are identified, and the relationships between radiation intensities and particle concentrations are established.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"39 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723700701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The probe and spectral measurements of the plasma of the BCl3–Cl2 gas medium are carried out. Data are obtained on the influence of the initial composition of the gas medium on the electric field strength, gas temperature, particle concentration, and reduced electric field strength under conditions of a direct current glow discharge. The emission spectra of the plasma of the BCl3–Cl2 gas medium are analyzed, the main emitting components are identified, and the relationships between radiation intensities and particle concentrations are established.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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