Fatigue Analysis and Estimation of the Number of Exposure Cycles until the Failure of the Sensitive Element of a Micromechanical Capacitive Accelerometer
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引用次数: 0
Abstract
Ensuring the reliability of the functioning of MEMS devices is the most important task facing developers. Due to the variety of designs and materials used in MEMS devices, various failure mechanisms can occur. Most of these devices contain moving parts of the structure. The fatigue properties of the structural materials used and their aging under prolonged repetitive cyclic loading can lead to failure, which directly affects the reliability of the device. In this paper the fatigue properties and reliability of the sensitive element (SE) of a micromechanical accelerometer (MMA) sandwich structure of a capacitive type made of silicon under the conditions of the mechanism of fatigue failure of the material are analyzed. The number of cycles of periodic exposure for the occurrence of a failure and the failure rate of SEs are calculated. The crystallographic orientation of the surface plane of silicon—the SE material—is considered. The simulation results show that the fatigue life of SE of an MMA made of silicon can be sufficiently strong for general purpose applications.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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