S. S. Evstafyev, V. K. Samoylikov, D. V. Vertyanov
{"title":"Modeling of Heat Transfer for a Three-Dimensional Microelectromechanical Mirror Element with Consideration of Its Packaging Features","authors":"S. S. Evstafyev, V. K. Samoylikov, D. V. Vertyanov","doi":"10.1134/s1063739723600292","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\n<b>Abstract</b>—</h3><p>In a previous study, the authors demonstrated the steps necessary to determine the performance characteristics of a micromechanical mirror element. The mirror is made up of two bimorph structures consisting of aluminum and silicon dioxide, with a reflective element coated in aluminum attached to movable beams. By applying voltage to electrical heating elements within the beams, the structure can be manipulated due to uneven expansion of the materials. In this study, finite element analysis software is used to simulate the mirror and compare the results with analytical methods. The importance of accurate parameter calculation in designing micromechanical devices is emphasized. The study shows that the deflection sweep, overheating values, and heating/cooling times of the mirror beams align with previously calculated analytical expressions and experimental results. This suggests that the analytical method described in previous studies can be applied to designing micromechanical devices that rely on thermal principles and require precise temperature control for optimal performance. Also the package characteristics are considered and guidelines for it are given with consideration to mirror performance.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"26 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723600292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract—
In a previous study, the authors demonstrated the steps necessary to determine the performance characteristics of a micromechanical mirror element. The mirror is made up of two bimorph structures consisting of aluminum and silicon dioxide, with a reflective element coated in aluminum attached to movable beams. By applying voltage to electrical heating elements within the beams, the structure can be manipulated due to uneven expansion of the materials. In this study, finite element analysis software is used to simulate the mirror and compare the results with analytical methods. The importance of accurate parameter calculation in designing micromechanical devices is emphasized. The study shows that the deflection sweep, overheating values, and heating/cooling times of the mirror beams align with previously calculated analytical expressions and experimental results. This suggests that the analytical method described in previous studies can be applied to designing micromechanical devices that rely on thermal principles and require precise temperature control for optimal performance. Also the package characteristics are considered and guidelines for it are given with consideration to mirror performance.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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