A Method to Compute QAOA Fixed Angles

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600577
A. Yu. Chernyavskiy, B. I. Bantysh
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Abstract

QAOA (Quantum Approximate Optimization Algorithms) is one of the most promising algorithms of Noisy Intermediate Scale Quantum (NISQ) era. The standard approach to QAOA involves the use of a hybrid quantum-classical optimization, although this approach was not considered as the main one in the original paper on QAOA. Recently, a new approach has emerged based on the hypothesis that optimal circuit parameters (angles) are close for a wide class of problems. However, the search for fixed angles itself remains a challenge with different approaches. We propose one specific method based on the use of a fixed training set and the special metric associated with increasing the probability of a correct answer. We carry out the analysis of the proposed method performance on the unweighted Max-Cut problems and random weighted QUBO (Quadratic Unconstrained Binary Optimization) problems of the special type.

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计算 QAOA 固定角度的方法
摘要QAOA(量子近似优化算法)是噪声中间量级量子(NISQ)时代最有前途的算法之一。量子近似优化算法的标准方法是使用量子-经典混合优化,尽管这种方法在有关量子近似优化算法的原始论文中并未被视为主要方法。最近,出现了一种新方法,它基于这样一种假设,即最优电路参数(角度)对于很多问题来说都很接近。然而,通过不同的方法寻找固定角度本身仍是一项挑战。我们提出了一种基于使用固定训练集和与增加正确答案概率相关的特殊度量的具体方法。我们对所提方法在非加权 Max-Cut 问题和随机加权 QUBO(二次无约束二元优化)特殊类型问题上的性能进行了分析。
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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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