A Comprehensive Study on Failure Modes and Mechanisms of Thin Film Chip Resistors

Dr. Sarat Kumar Dash, Sandhya V. Kamat
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Abstract

Usually, resistors and capacitors populate majority portion of a common electrical circuit, hence miniaturization drive of any package or subsystem starts with miniaturized resistor and capacitors. In this context, thin film chip resistors are the most sought-after components for any electronic/electrical circuit due to their small size, wide range of values, military temperature range, stringent tolerance, low TCR value (recognised with PPM). Increased use of thin-film surface mount chip resistors in military and space application has led to an increased awareness of its potential failure modes in harsh environments. Thin film resistor with lower TCR (5PPM, 10PPM and 25PPM) are most preferable and widely used because of very low temperature coefficient of resistance (TCR) and high resistivity, which suits for high precision measurement application. Low temperature coefficients characteristics of thin film resistors also makes them stable and reliable. Because of their high-volume usage in recent times, failure in thin film resistor with lower TCR/PPM (Parts per Million) are also being seen more predominantly. In general, there are two types of thin film chip resistors, one is discrete type and the other is die type or wire bondable type. Discrete type chip resistor are used directly on cards, whereas, die type/wire bondable type chip resistors used in hermetically sealed HMC packages. Standard failure mode of a resistor is open mode or high resistance mode, whereas short mode failure has a very low probability. Hence in this paper, failure modes and mechanisms of both types of thin film chip resistors, with respect to common failure causes such as EOS, ESD are discussed, which is in continuation to Fabrication/Workmanship related failures discussed in our earlier technical paper. With this, all possible failure modes and mechanism related thin film chip resistors are explained. Discussion in totality always provide in depth analysis on a subject of concern, which in turn facilitate reliability assessment of the component and corrective action, if any.
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关于薄膜片式电阻器失效模式和机理的综合研究
通常,电阻器和电容器占普通电路的绝大部分,因此,任何封装或子系统的微型化都始于电阻器和电容器的微型化。在这种情况下,薄膜片式电阻器因其体积小、数值范围广、军用温度范围大、容差严格、TCR 值低(与 PPM 一致)而成为电子/电气电路中最受欢迎的元件。由于薄膜表面贴装片式电阻器在军事和航天应用中的使用日益增多,人们对其在恶劣环境中的潜在失效模式有了更多的认识。TCR 值较低的薄膜电阻器(5PPM、10PPM 和 25PPM)具有极低的电阻温度系数 (TCR) 和高电阻率,适合高精度测量应用,因此最受欢迎并得到广泛应用。薄膜电阻器的低温度系数特性也使其稳定可靠。由于近年来薄膜电阻器的大量使用,TCR/PPM(百万分率)较低的薄膜电阻器出现故障的情况也越来越多。一般来说,薄膜片式电阻器有两种类型,一种是分立型,另一种是裸片型或可接线型。分立式片式电阻器直接用于板卡上,而芯片式/可接线式片式电阻器则用于密封的 HMC 封装中。电阻器的标准失效模式是开路模式或高阻模式,而短路模式失效的概率非常低。因此,本文将讨论这两种薄膜片式电阻器的失效模式和机制,以及常见的失效原因,如 EOS、ESD,这也是我们之前的技术论文中讨论的与制造/工艺相关的失效的延续。由此,我们解释了与薄膜片式电阻器有关的所有可能失效模式和机制。总之,讨论总是能对所关注的问题进行深入分析,这反过来又有助于对元件的可靠性进行评估和采取纠正措施(如果有的话)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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