Yina Yang , Yufeng Liu , Xiaohong Zheng , Xinfeng Qiao
{"title":"Synthesis of α-Fe2O3 nanorod for sensitive and selective detection of the n-butanol","authors":"Yina Yang , Yufeng Liu , Xiaohong Zheng , Xinfeng Qiao","doi":"10.1016/j.sse.2024.108934","DOIUrl":null,"url":null,"abstract":"<div><p>In different environments, high concentration of n-butanol will have certain harm to the human senses and nervous system, meanwhile the electrochemical sensor limits its widespread use due to its high power consumption, so it is very meaningful to develop a semiconductor n-butanol sensor with low energy consumption. In this paper, α-Fe<sub>2</sub>O<sub>3</sub> nanorods were prepared by one-step hydrothermal method and then assembled into a n-butanol sensor capable of detecting n-butanol, and the effects of two different calcination temperatures on the performance of the sensor were investigated. Due to its higher Fe<sup>3+</sup> content, higher oxygen vacancy content and larger specific surface area, S1-250 provided more active sites for gas adsorption, which making the response of S1-250 to 100 ppm n-butanol at 215 °C reached to 88.4. Finally, the effect of the calcination temperature on the sensor and the response mechanism were discussed. This paper offers promising applications for low-energy n-butanol sensors assembled from a single material α −Fe<sub>2</sub>O<sub>3</sub>.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"217 ","pages":"Article 108934"},"PeriodicalIF":1.4000,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000832","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In different environments, high concentration of n-butanol will have certain harm to the human senses and nervous system, meanwhile the electrochemical sensor limits its widespread use due to its high power consumption, so it is very meaningful to develop a semiconductor n-butanol sensor with low energy consumption. In this paper, α-Fe2O3 nanorods were prepared by one-step hydrothermal method and then assembled into a n-butanol sensor capable of detecting n-butanol, and the effects of two different calcination temperatures on the performance of the sensor were investigated. Due to its higher Fe3+ content, higher oxygen vacancy content and larger specific surface area, S1-250 provided more active sites for gas adsorption, which making the response of S1-250 to 100 ppm n-butanol at 215 °C reached to 88.4. Finally, the effect of the calcination temperature on the sensor and the response mechanism were discussed. This paper offers promising applications for low-energy n-butanol sensors assembled from a single material α −Fe2O3.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.