Yang Huang , Yiyi Yan , Massinissa Nabet , Fanyu Liu , Bo Li , Binhong Li , Zhengsheng Han , Sorin Cristoloveanu , Jean-Pierre Raskin
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引用次数: 0
Abstract
A new Double-BOX structure is introduced to reveal the electrical properties of undoped polysilicon used to enhance the performance of radio frequency SOI substrates. A plateau is clearly observed in the capacitance–voltage (C-V) characteristics, which is due to the influence of the potential barrier formed at the grain boundary. A tangential approximation method based on a three-element circuit model is proposed for correcting the measured C-V curve. With the corrected C-V curve, the effective trap density distribution in polysilicon is determined for each frequency.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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