M. M. Asadov, S. O. Mammadova, S. N. Mustafaeva, S. S. Huseynova, V. F. Lukichev
{"title":"Modeling of the Electronic Properties of M-Doped Supercells Li4Ti5O12–M (М = Zr, Nb) with a Monoclinic Structure for Lithium-Ion Batteries","authors":"M. M. Asadov, S. O. Mammadova, S. N. Mustafaeva, S. S. Huseynova, V. F. Lukichev","doi":"10.1134/s1063739723600127","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The T–<i>x</i> phase diagram of the quasi-binary system <span>\\({\\text{L}}{{{\\text{i}}}_{2}}{\\text{O}}- {\\text{Ti}}{{{\\text{O}}}_{2}}\\)</span> was refined and the isothermal cross section of the ternary <span>\\({\\text{Li}}- {\\text{Ti}}- {\\text{O}}\\)</span> system at 298 K was constructed. The equilibrium phase regions of <span>\\({\\text{Li}}- {\\text{Ti}}- {\\text{O}}\\)</span> in the solid state are determined with the participation of boundary binary oxides and four intermediate ternary compounds <span>\\({\\text{L}}{{{\\text{i}}}_{4}}{\\text{Ti}}{{{\\text{O}}}_{4}}\\)</span>, <span>\\({\\text{L}}{{{\\text{i}}}_{2}}{\\text{Ti}}{{{\\text{O}}}_{3}}\\)</span>, <span>\\({\\text{L}}{{{\\text{i}}}_{4}}{\\text{T}}{{{\\text{i}}}_{5}}{{{\\text{O}}}_{{12}}}\\)</span> and <span>\\({\\text{L}}{{{\\text{i}}}_{2}}{\\text{T}}{{{\\text{i}}}_{3}}{{{\\text{O}}}_{7}}\\)</span>. Using the density functional theory (DFT LSDA) method, the formation energies <span>\\(({{\\Delta }_{f}}E)\\)</span> of the indicated ternary compounds of the <span>\\({\\text{L}}{{{\\text{i}}}_{2}}{\\text{O}}- {\\text{Ti}}{{{\\text{O}}}_{2}}\\)</span> system were calculated and the dependence of <span>\\({{\\Delta }_{f}}E\\)</span> on the composition was plotted. Ab initio modeling of supercells based on M-doped <span>\\(\\left( {{\\text{M }} = {\\text{ Zr}},{\\text{ Nb}}} \\right)\\)</span> anode material based on the <span>\\({\\text{L}}{{{\\text{i}}}_{4}}{\\text{T}}{{{\\text{i}}}_{5}}{{{\\text{O}}}_{{12}}}\\)</span> (<span>\\({\\text{LTO}}\\)</span>) compound with a monoclinic structure (m) was carried out. It has been shown that partial substitution of cations and oxygen in the <span>\\({\\text{m}}- {\\text{LTO}}- {\\text{M}}\\)</span> structure increases the efficiency of a lithium-ion battery (<span>\\({\\text{LIB}}\\)</span>) both by stabilizing the structure and by increasing the diffusion rate of <span>\\({\\text{L}}{{{\\text{i}}}^{ + }}\\)</span>. Due to the contribution of d-orbitals (<span>\\({\\text{Z}}{{{\\text{r}}}^{{4 + }}}\\,\\,4{\\text{d}},\\)</span> <span>\\({\\text{N}}{{{\\text{b}}}^{{3 + }}}\\)</span> 4d orbitals) to the exchange energy, partial polarization of electronic states occurs and the electronic conductivity of <span>\\({\\text{m}}- {\\text{LTO}}- {\\text{M}}\\)</span> increases. The formation of oxygen vacancies in the <span>\\({\\text{m}}- {\\text{LTO}}- {\\text{M}}\\)</span> crystal lattice, as in binary oxides, can create donor levels and improve the transport of <span>\\({\\text{L}}{{{\\text{i}}}^{ + }}\\)</span> and electrons. M-doping of the <span>\\({\\text{m}}- {\\text{LTO}}\\)</span> structure by replacing cations, in particular lithium, with Zr or Nb atoms noticeably reduces the band gap (<span>\\({{E}_{{\\text{g}}}}\\)</span>) of <span>\\({\\text{m}}- {\\text{LTO}}- {\\text{M}}\\)</span> supercells. In this case, in the <span>\\({\\text{m}}- {\\text{LTO}}- {\\text{M}}\\)</span> band structure, the Fermi level shifts to the conduction band and the band gap narrows. Decreasing the <span>\\({{E}_{{\\text{g}}}}\\)</span> value increases the electronic and lithium-ion conductivity of <span>\\({\\text{m}}- {\\text{LTO}}- {\\text{M}}\\)</span> supercells.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"38 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723600127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The T–x phase diagram of the quasi-binary system \({\text{L}}{{{\text{i}}}_{2}}{\text{O}}- {\text{Ti}}{{{\text{O}}}_{2}}\) was refined and the isothermal cross section of the ternary \({\text{Li}}- {\text{Ti}}- {\text{O}}\) system at 298 K was constructed. The equilibrium phase regions of \({\text{Li}}- {\text{Ti}}- {\text{O}}\) in the solid state are determined with the participation of boundary binary oxides and four intermediate ternary compounds \({\text{L}}{{{\text{i}}}_{4}}{\text{Ti}}{{{\text{O}}}_{4}}\), \({\text{L}}{{{\text{i}}}_{2}}{\text{Ti}}{{{\text{O}}}_{3}}\), \({\text{L}}{{{\text{i}}}_{4}}{\text{T}}{{{\text{i}}}_{5}}{{{\text{O}}}_{{12}}}\) and \({\text{L}}{{{\text{i}}}_{2}}{\text{T}}{{{\text{i}}}_{3}}{{{\text{O}}}_{7}}\). Using the density functional theory (DFT LSDA) method, the formation energies \(({{\Delta }_{f}}E)\) of the indicated ternary compounds of the \({\text{L}}{{{\text{i}}}_{2}}{\text{O}}- {\text{Ti}}{{{\text{O}}}_{2}}\) system were calculated and the dependence of \({{\Delta }_{f}}E\) on the composition was plotted. Ab initio modeling of supercells based on M-doped \(\left( {{\text{M }} = {\text{ Zr}},{\text{ Nb}}} \right)\) anode material based on the \({\text{L}}{{{\text{i}}}_{4}}{\text{T}}{{{\text{i}}}_{5}}{{{\text{O}}}_{{12}}}\) (\({\text{LTO}}\)) compound with a monoclinic structure (m) was carried out. It has been shown that partial substitution of cations and oxygen in the \({\text{m}}- {\text{LTO}}- {\text{M}}\) structure increases the efficiency of a lithium-ion battery (\({\text{LIB}}\)) both by stabilizing the structure and by increasing the diffusion rate of \({\text{L}}{{{\text{i}}}^{ + }}\). Due to the contribution of d-orbitals (\({\text{Z}}{{{\text{r}}}^{{4 + }}}\,\,4{\text{d}},\)\({\text{N}}{{{\text{b}}}^{{3 + }}}\) 4d orbitals) to the exchange energy, partial polarization of electronic states occurs and the electronic conductivity of \({\text{m}}- {\text{LTO}}- {\text{M}}\) increases. The formation of oxygen vacancies in the \({\text{m}}- {\text{LTO}}- {\text{M}}\) crystal lattice, as in binary oxides, can create donor levels and improve the transport of \({\text{L}}{{{\text{i}}}^{ + }}\) and electrons. M-doping of the \({\text{m}}- {\text{LTO}}\) structure by replacing cations, in particular lithium, with Zr or Nb atoms noticeably reduces the band gap (\({{E}_{{\text{g}}}}\)) of \({\text{m}}- {\text{LTO}}- {\text{M}}\) supercells. In this case, in the \({\text{m}}- {\text{LTO}}- {\text{M}}\) band structure, the Fermi level shifts to the conduction band and the band gap narrows. Decreasing the \({{E}_{{\text{g}}}}\) value increases the electronic and lithium-ion conductivity of \({\text{m}}- {\text{LTO}}- {\text{M}}\) supercells.
期刊介绍:
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.