Quantum Control Landscapes and Traps

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600796
B. O. Volkov, A. N. Pechen
{"title":"Quantum Control Landscapes and Traps","authors":"B. O. Volkov, A. N. Pechen","doi":"10.1134/s1063739723600796","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Quantum control is a necessary tool for a variety of modern quantum technologies as it allows to optimally manipulate quantum systems for various tasks. Traps are points of local but not global optimum of the objective functional for a given quantum control problem. In a more general sense, traps are critical points of the objective functional which are hard to escape by local search algorithms. Here a review of some results of the analysis of possibility of having traps in landscapes of coherently controlled closed quantum systems is given. In one-qubit case, there are no traps. For special multilevel quantum systems, higher-order traps may appear.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"115 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723600796","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
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Abstract

Quantum control is a necessary tool for a variety of modern quantum technologies as it allows to optimally manipulate quantum systems for various tasks. Traps are points of local but not global optimum of the objective functional for a given quantum control problem. In a more general sense, traps are critical points of the objective functional which are hard to escape by local search algorithms. Here a review of some results of the analysis of possibility of having traps in landscapes of coherently controlled closed quantum systems is given. In one-qubit case, there are no traps. For special multilevel quantum systems, higher-order traps may appear.

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量子控制景观和陷阱
摘要量子控制是各种现代量子技术的必要工具,因为它可以在各种任务中对量子系统进行优化操纵。陷阱是给定量子控制问题目标函数的局部最优点,但不是全局最优点。从更广泛的意义上讲,陷阱是目标函数的临界点,很难通过局部搜索算法逃脱。在此,我们将回顾分析相干控制封闭量子系统景观中存在陷阱可能性的一些结果。在单量子比特情况下,不存在陷阱。对于特殊的多级量子系统,可能会出现高阶陷阱。
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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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