{"title":"Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching","authors":"V. P. Kudrya","doi":"10.1134/s1063739723600358","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"22 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723600358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
