E. A. Dedkov, V. L. Kurochkin, V. N. Chizhevsky, M. V. Lahmitski, S. Ya. Kilin, R. A. Shakhovoy
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引用次数: 0
Abstract
We present a new view at simulating the VCSEL spectrum based on stochastic version of the widely used SFM model [1]. In comparison to the existing results [2], our method provides not only wavelengths and relative linewidths of lasing spikes but also the full spectrum. We show that it captures all known features such as polarization switching [3], four-wave-mixing (FWM) spike [4], and relaxation oscillations [5].
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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