Some Properties of Argon as an Actinometric Atom. I. Metastable Levels Excitation

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600140

V. P. Kudrya

引用次数: 0

Abstract

Using argon as an actinometric atom requires knowledge of its electron excitation kinetics. In turn, this kinetics is largely determined by electron impact excitation cross-sections as well as quenching rate constants for the argon metastable levels. Unfortunately, the published experimental data for these cross-sections differ both in their magnitude and in the type of energy dependence. We have shown that if we exclude the first point from the 2004 data sets, then the cross sections normalized at the 20 eV point can be fairly well approximated by well-known fitting formulas.

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作为动量原子的氩的一些特性。I. 可迁移水平激发

摘要将氩作为动量原子需要了解其电子激发动力学。反过来，这种动力学在很大程度上取决于电子碰撞激发截面以及氩态可变水平的淬灭速率常数。遗憾的是，已公布的这些截面的实验数据在其大小和能量依赖类型上都存在差异。我们已经证明，如果我们从 2004 年的数据集中排除第一个点，那么在 20 eV 点归一化的横截面可以通过著名的拟合公式得到相当好的近似值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

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期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.