{"title":"Nonequilibrium Diagram Technique Applied to the Electronic Transport via Tightly Bound Localized States","authors":"I. D. Kopchinskii, V. V. Shorokhov","doi":"10.1134/s1063739723600413","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Keldysh nonequilibrium diagram technique is used for a detailed description of electron transport through a system of tightly bound spatially separated localized states. Particular attention is paid to the predictive ability of the effective theory, for which the number of free parameters in the second-quantized Hamiltonian is reduced. The employed formalism in a variant of tight-binding model rigorously treats multi-electron tunneling effects and the discreteness of the energy spectra in low-dimensional structures. The model is also extended with Coulomb interaction of moderate strength. Proposed algorithm for calculating electric currents and occupation numbers of localized states in presence of weak Coulomb repulsion is implemented in software and tested on a model system of two consecutive three-level quantum dots. Electron transfer proceeds both sequentially between the dots and in parallel within each quantum dot. The calculated IV-curve and current stability diagram are intuitively explained using coordination energy diagrams. The model qualitatively reproduces typical effects in interference-based nanoelectronics: resonant tunneling, negative differential resistance, population inversion in a multi-level system. The impact of moderate Coulomb correlations on current stability diagram is examined. This demonstrates the capability of extended tight-binding model to incorporate weak Coulomb interaction into the description of electronic transport via discrete quantum states.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723600413","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
Keldysh nonequilibrium diagram technique is used for a detailed description of electron transport through a system of tightly bound spatially separated localized states. Particular attention is paid to the predictive ability of the effective theory, for which the number of free parameters in the second-quantized Hamiltonian is reduced. The employed formalism in a variant of tight-binding model rigorously treats multi-electron tunneling effects and the discreteness of the energy spectra in low-dimensional structures. The model is also extended with Coulomb interaction of moderate strength. Proposed algorithm for calculating electric currents and occupation numbers of localized states in presence of weak Coulomb repulsion is implemented in software and tested on a model system of two consecutive three-level quantum dots. Electron transfer proceeds both sequentially between the dots and in parallel within each quantum dot. The calculated IV-curve and current stability diagram are intuitively explained using coordination energy diagrams. The model qualitatively reproduces typical effects in interference-based nanoelectronics: resonant tunneling, negative differential resistance, population inversion in a multi-level system. The impact of moderate Coulomb correlations on current stability diagram is examined. This demonstrates the capability of extended tight-binding model to incorporate weak Coulomb interaction into the description of electronic transport via discrete quantum states.
摘要 凯尔迪什非平衡图技术用于详细描述电子通过紧密结合的空间分离局部态系统的传输。研究特别关注有效理论的预测能力，因为有效理论减少了第二量子化哈密顿自由参数的数量。在紧束缚模型的变体中采用的形式主义严格处理了多电子隧道效应和低维结构中能谱的离散性。该模型还扩展了中等强度的库仑相互作用。提出的计算弱库仑斥力情况下局部态的电流和占据数的算法已在软件中实现，并在两个连续的三量级量子点模型系统上进行了测试。电子转移既在量子点之间顺序进行，也在每个量子点内部并行进行。计算出的 IV 曲线和电流稳定图可以用配位能图直观地解释。该模型定性地再现了基于干涉的纳米电子学中的典型效应：共振隧穿、负微分电阻、多级系统中的种群反转。研究了适度库仑相关性对电流稳定性图的影响。这证明了扩展的紧密结合模型有能力将弱库仑相互作用纳入通过离散量子态进行的电子传输描述中。
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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