Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600395

A. V. Timakov, V. I. Shevyakov

引用次数: 0

Abstract

This research is devoted to the study of the influence of rhenium admixture on the mechanical and conductive properties of tungsten thin films. The results of the study of adhesive films properties are obtained. For pure tungsten, tungsten–rhenium 5% and tungsten–rhenium 20% wires with a thickness of 0.25 μm studies of the structure and elemental analysis at the grain boundary and in the grain itself were carried out. An explanation of the reason for improving the mechanical properties of tungsten thin films when rhenium is added to their composition (“rhenium effect”) is proposed. A study of the mechanical stresses level has been carried out, which corresponds to the theoretically obtained data. The resistivity was measured for pure tungsten films and films with alloying rhenium of 5, 10, 15 and 20%. Films that meet the requirements of industry standards have been obtained.

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钨铼合金薄膜和金属丝中的铼效应

摘要本研究致力于研究掺铼对钨薄膜机械和导电性能的影响。获得了粘合薄膜性能的研究结果。对厚度为 0.25 μm 的纯钨丝、5% 的钨铼丝和 20% 的钨铼丝进行了晶界和晶粒本身的结构和元素分析研究。提出了在钨薄膜成分中添加铼（"铼效应"）可改善其机械性能的原因。对机械应力水平进行了研究，结果与理论数据相符。测量了纯钨薄膜和铼合金含量分别为 5%、10%、15% 和 20% 的薄膜的电阻率。结果表明，薄膜符合工业标准的要求。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.