{"title":"Investigation of Dual-Channel Compensating Plasma Diode for Reconfigurable Antenna","authors":"Yingying Wang, Yutian Li, Zhanrong Zhou, Xiaofang Shen, Chao Ma, Yang Gao, Yiming Chen","doi":"10.1134/s1063739723600917","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>This study delves into the radiation properties of a reconfigurable antenna that integrates both traditional single-channel SPiN diodes and dual-channel compensating SPiN diodes as core elements. The dual-channel SPiN diode compensates for the attenuation of carrier concentration at the midpoint of the intrinsic region, resulting in a carrier concentration exceeding 10<sup>18</sup> cm<sup>–3</sup>. The aim is to explore novel configurations of solid-state plasma antennas that have the potential to significantly improve radiation performance. The reconfigurable antenna is capable of operating in two distinct modes, specifically a low-frequency mode and a high-frequency mode, depending on the conducting state of the diode array. Through graphical analysis, it was observed that two reconfigured modes were successfully achieved, with relative bandwidths exceeding 13%. The incorporation of dual-channel compensating SPiN diodes led to notable performance improvements, as evident from a substantial reduction in the S11 parameter. These enhancements can be attributed to the intensified concentration and more uniform distribution of the solid-state plasma achieved by the dual-channel compensating devices.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"35 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723600917","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
This study delves into the radiation properties of a reconfigurable antenna that integrates both traditional single-channel SPiN diodes and dual-channel compensating SPiN diodes as core elements. The dual-channel SPiN diode compensates for the attenuation of carrier concentration at the midpoint of the intrinsic region, resulting in a carrier concentration exceeding 1018 cm–3. The aim is to explore novel configurations of solid-state plasma antennas that have the potential to significantly improve radiation performance. The reconfigurable antenna is capable of operating in two distinct modes, specifically a low-frequency mode and a high-frequency mode, depending on the conducting state of the diode array. Through graphical analysis, it was observed that two reconfigured modes were successfully achieved, with relative bandwidths exceeding 13%. The incorporation of dual-channel compensating SPiN diodes led to notable performance improvements, as evident from a substantial reduction in the S11 parameter. These enhancements can be attributed to the intensified concentration and more uniform distribution of the solid-state plasma achieved by the dual-channel compensating devices.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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