Shaimaa Mostafa, Fathy Z. Amer, Mohamed M. ElKhatib, Roaa I. Mubarak
{"title":"Memristors Modelling and Simulation for Digital to Analog Converter Circuit","authors":"Shaimaa Mostafa, Fathy Z. Amer, Mohamed M. ElKhatib, Roaa I. Mubarak","doi":"10.1134/s1063739723600723","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The thermometer digital-to-analog converter (DAC) is a distinctive architecture that plays a vital role in converting digital data into corresponding analog signals, the thermometer DAC employs a resistor network where each bit of the digital input corresponds to a unique resistor. It has notable drawbacks that need careful consideration. As the resolution of the DAC increases, the number of required current sources grows exponentially, leading to complex and demanding circuitry. This can escalate power consumption and occupy significant chip area, which is a critical concern in integrated circuit design. Furthermore, the current mismatch between the multiple current sources. Therefore, integrating memristors into DACs paves the way for more compact and efficient designs, reducing system complexity and enhancing reliability. The Voltage ThrEshold Adaptive Memristor (VTEAM) model of memristor is validated by using Virtuoso. In addition, a digital-to-analog converter based on memristor technology is implemented, taking advantage of the memristor’s compact size, minimal power usage, and a voltage threshold that is relatively low. The DAC design being proposed is based on a core DAC cell that consists of two memristors connected in opposing orientations.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"26 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723600723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The thermometer digital-to-analog converter (DAC) is a distinctive architecture that plays a vital role in converting digital data into corresponding analog signals, the thermometer DAC employs a resistor network where each bit of the digital input corresponds to a unique resistor. It has notable drawbacks that need careful consideration. As the resolution of the DAC increases, the number of required current sources grows exponentially, leading to complex and demanding circuitry. This can escalate power consumption and occupy significant chip area, which is a critical concern in integrated circuit design. Furthermore, the current mismatch between the multiple current sources. Therefore, integrating memristors into DACs paves the way for more compact and efficient designs, reducing system complexity and enhancing reliability. The Voltage ThrEshold Adaptive Memristor (VTEAM) model of memristor is validated by using Virtuoso. In addition, a digital-to-analog converter based on memristor technology is implemented, taking advantage of the memristor’s compact size, minimal power usage, and a voltage threshold that is relatively low. The DAC design being proposed is based on a core DAC cell that consists of two memristors connected in opposing orientations.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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