Performance Analysis of Graphene Nanoribbon Based through Silicon Vias for 3D-ICs

Q4 Engineering Russian Microelectronics Pub Date : 2024-06-04 DOI:10.1134/s1063739724600079

Sunil Kumar Ramanathula, B. Anuradha

引用次数: 0

Abstract

Through silicon via is the key technology for 3D-Integrated Circuits (3D-ICs) which could vertically stack homogeneous or heterogeneous dies with the high performance and density. To evaluate the electrical characteristics of TSV at high-frequency transmission, the skin effect and surface roughness effect are necessary to be considered. However, these effects would significantly result in TSV equivalent resistance under the high operating frequency. Thus, it is important to investigate the Graphene nanoribbon (GNR) TSV which less skin effect intrinsically. In this work, we analyze the advantage of GNR as TSV compared with conventional filler materials such as copper (Cu), SWCNT, MWCNT, MCB. Further, we also simulate the signal integrity analysis of GNR based TSV, the resistance of MLGNR for different TSV widths and propagation delay and crosstalk induced delay for different TSV heights by using HSPICE simulator. In summary, GNR could be a promising TSV filler material at the high speed future ICs based on our study.

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基于石墨烯纳米带的 3D-IC 硅通孔性能分析

摘要硅通孔（TSV）是三维集成电路（3D-IC）的关键技术，它可以垂直堆叠同质或异质芯片，并具有高性能和高密度。要评估 TSV 在高频传输时的电气特性，必须考虑趋肤效应和表面粗糙度效应。然而，在高工作频率下，这些效应会大大增加 TSV 的等效电阻。因此，研究从本质上减少趋肤效应的石墨烯纳米带 (GNR) TSV 非常重要。在这项工作中，我们分析了 GNR 作为 TSV 与铜（Cu）、SWCNT、MWCNT、MCB 等传统填充材料相比的优势。此外，我们还使用 HSPICE 仿真器模拟了基于 GNR 的 TSV 的信号完整性分析、不同 TSV 宽度下的 MLGNR 电阻以及不同 TSV 高度下的传播延迟和串扰引起的延迟。总之，根据我们的研究，GNR 可以成为未来高速集成电路中一种很有前途的 TSV 填充材料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

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0.70

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0.00%

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期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.