{"title":"Plasma Profiling of LiNbO3 Film for the Formation of Piezoelectric Energy Converters","authors":"V. S. Klimin, A. Geldash, O. A. Ageev","doi":"10.1134/s1063739724700793","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The presented work shows the formation and profiling of nanocrystalline LiNbO<sub>3</sub> films obtained by pulsed laser deposition, as well as the influence of the laser pulse repetition rate on the electrical properties, morphology, and growth processes of granular films. The study revealed that the nucleation process in LiNbO<sub>3</sub> films can be intentionally altered by increasing the laser pulse repetition rate. When the repetition rate was set to 4 Hz, the resulting film comprised local islands and clusters with a diameter of 118.1 ± 5.9 nm. On the other hand, nanocrystalline films grown at a repetition rate of 10 Hz exhibited a continuous granular structure with a grain diameter of 235 ± 11.75 nm. These findings have the potential to contribute to the advancement of environmentally friendly energy devices utilizing lead-free piezoelectric energy harvesters.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"16 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739724700793","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The presented work shows the formation and profiling of nanocrystalline LiNbO3 films obtained by pulsed laser deposition, as well as the influence of the laser pulse repetition rate on the electrical properties, morphology, and growth processes of granular films. The study revealed that the nucleation process in LiNbO3 films can be intentionally altered by increasing the laser pulse repetition rate. When the repetition rate was set to 4 Hz, the resulting film comprised local islands and clusters with a diameter of 118.1 ± 5.9 nm. On the other hand, nanocrystalline films grown at a repetition rate of 10 Hz exhibited a continuous granular structure with a grain diameter of 235 ± 11.75 nm. These findings have the potential to contribute to the advancement of environmentally friendly energy devices utilizing lead-free piezoelectric energy harvesters.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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